Autor: |
Yoji Isota, Shoichi Oshima, Kazuo Tsubouchi, Suguru Kameda, Takashi Fujii, Hiroshi Oguma, Hiroyuki Nakase |
Rok vydání: |
2006 |
Předmět: |
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Zdroj: |
2006 8th Electronics Packaging Technology Conference. |
DOI: |
10.1109/eptc.2006.342788 |
Popis: |
High frequency characteristics of any layer interstitial via hole (ALIVH) substrate have been evaluated for an application to the RF modules on 60GHz. A dielectric constant and loss tangent up to 60GHz was measured using strip line resonator designed on the ALIVH substrate. Measured dielectric constant 3.85-3.47 and loss tangent of 0.032-0.043 were almost constant from 2.5GHz to 60GHz. Equivalent lumped component circuit of via hole was modeled from measurement of frequency of strip line resonator with via hole. T-type LC circuit was employed for the circuit. The evaluated inductance was 0.090-0.128 nH and capacitance was 0.129-0.195 pF. It was confirmed that the high frequency characteristics of ALIVH were sufficient for the application to RF module and 3D SiP with no critical degradation. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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