Effect of Al Doping in the InGaN/GaN Multiple Quantum Well Light Emitting Diodes Grown by Metalorganic Chemical Vapour Deposition

Autor:	Zhang Bei, Xu Ke, Pan Yao-Bo, Hu Xiaodong, Yang Zhi-Jian, Lu Yu, Zhang Guo-Yi
Rok vydání:	2006
Předmět:	Diffraction Photoluminescence Materials science business.industry Doping General Physics and Astronomy Chemical vapor deposition law.invention Full width at half maximum Reciprocal lattice law Optoelectronics business Layer (electronics) Light-emitting diode
Zdroj:	Chinese Physics Letters. 23:256-258
ISSN:	1741-3540 0256-307X
DOI:	10.1088/0256-307x/23/1/074
Popis:	The effect of Al doping in the GaN layer of InGaN/GaN multiple quantum-well light emitting diodes (LEDs) grown by metalorganic chemical vapour deposition is investigated by using photoluminescence (PL) and high-resolution x-ray diffraction. The full width at half maximum of PL of Al doped LEDs is measured to be about 12 nm. The band edge photoluminescence emission intensity is enhanced significantly. In addition, the in-plane compressive strain in the Al-doped LEDs is improved significantly and measured by reciprocal space map. The output power of Al-doped LEDs is 130 mW in the case of the induced current of 200 mA.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b8540b19bb96695b6d75a626a1e02b78 https://doi.org/10.1088/0256-307x/23/1/074 Zobrazit plný text záznamu