| Autor: |
D. Claes, Anne Vandooren, Tibor Grasser, Hiroaki Arimura, Dominic Waldhoer, Laura Nyns, Al-Moatasem El-Sayed, Valery V. Afanas'ev, L.-A. Ragnarsson, Naoto Horiguchi, B. Kaczer, D. Linten, J. Franco, Z. Wu, M. Jech, J.-F. de Marneffe, Andre Stesmans, Y. Kimura |
| Rok vydání: |
2020 |
| Předmět: |
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| Zdroj: |
2020 IEEE International Electron Devices Meeting (IEDM). |
| Popis: |
integration requires development of low thermal budget process modules. High-quality SiO 2 interfacial layer (IL), obtained up to now only by high-temperature (≥850°C) oxidation or exposure, is crucial for pMOS NBTI reliability. In unannealed IL’s grown at reduced temperatures, we show that unrelaxed interface strain induces high defect densities, with physics-based NBTI modeling suggesting excessive hydroxyl-E’ defect formation due to Si-O bond stretch. Based on ab-initio theoretical insights, we demonstrate an atomic hydrogen treatment to passivate SiO 2 defects at low temperatures (100-300°C), which is shown to be vastly more effective than high pressure molecular hydrogen exposure, and to yield an SiO 2 quality and reliability surpassing a 900°C oxide. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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