On a Parasitic Bipolar Transistor Action in a Diode ESD Protection Device
| Autor: | Jin Young Choi |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Engineering Cmos chip Electrostatic discharge business.industry 05 social sciences Bipolar junction transistor General Engineering Electrical engineering Parasitic bipolar transistor Hardware_PERFORMANCEANDRELIABILITY 01 natural sciences CMOS 0502 economics and business 0103 physical sciences Hardware_INTEGRATEDCIRCUITS Equivalent circuit business 050203 business & management Hardware_LOGICDESIGN Diode |
| Zdroj: | Circuits and Systems. :2286-2295 |
| ISSN: | 2153-1293 2153-1285 |
| DOI: | 10.4236/cs.2016.79199 |
| Popis: | In this work, we show that an excessive lattice heating problem can occur in the diode electrostatic discharge (ESD) protection device connected to a VDD bus in the popular diode input protection scheme, which is favorably used in CMOS RF ICs. To figure out the reason for the excessive lattice heating, we construct an equivalent circuit for input human-body model (HBM) test environment of a CMOS chip equipped with the diode protection circuit, and execute mixed-mode transient simulations utilizing a 2-D device simulator. We analyze the simulation results in detail to show out that a parasitic pnp bipolar transistor action relating nearby p+-substrate contacts is responsible for the excessive lattice heating in the diode protection device, which has never been focused before anywhere. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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