Influence of laser annealing on defect-related luminescence of InGaN epilayers
| Autor: | V. Kazlauskienė, D. Dobrovolskas, Chih-Chung Yang, J. Miškinis, Che-Hao Liao, Pavels Onufrijevs, Jūras Mickevičius, Edmundas Kuokstis, Arturs Medvids, Jeng-Jie Huang, Gintautas Tamulaitis, Chih-Yen Chen |
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| Rok vydání: | 2011 |
| Předmět: |
Auger electron spectroscopy
Materials science Photoluminescence Annealing (metallurgy) business.industry Biophysics Analytical chemistry Physics::Optics General Chemistry Condensed Matter Physics Laser Biochemistry Crystallographic defect Atomic and Molecular Physics and Optics law.invention Condensed Matter::Materials Science law Optoelectronics business Luminescence Spectroscopy Quantum well |
| Zdroj: | Journal of Luminescence. 131:1322-1326 |
| ISSN: | 0022-2313 |
| DOI: | 10.1016/j.jlumin.2011.03.022 |
| Popis: | InGaN epilayers exhibiting strong defect-related sub-bandgap emission, which is undesirable in epilayers and quantum well structures designed for light-emitting diodes and laser diodes, have been studied by confocal photoluminescence spectroscopy, Auger electron spectroscopy, and atomic force microscopy. Inhomogeneous spatial distribution of band-edge luminescence intensity and comparatively homogenous distribution of defect-related emission are demonstrated. It is shown that laser annealing at power densities causing the increase of the temperature at the epilayer surface high enough for indium atoms to move to the surface results in suppression of the defect-related emission. |
| Databáze: | OpenAIRE |
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