Experimental determination of dead layer thickness for excitons in a wide GaAs/AlGaAs quantum well
| Autor: | O. F. Vyvenko, I. Ya. Gerlovin, A. A. Sitnikova, Yu. P. Efimov, D. K. Loginov, E. V. Ubyĭvovk, Yu. K. Dolgikh, Demid A. Kirilenko, V. V. Petrov, S. A. Eliseev |
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| Rok vydání: | 2009 |
| Předmět: |
Materials science
Solid-state physics Condensed Matter::Other business.industry Exciton Dead layer Heterojunction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Interfacing Optoelectronics business Gaas algaas Quantum well |
| Zdroj: | Physics of the Solid State. 51:1929-1934 |
| ISSN: | 1090-6460 1063-7834 |
| DOI: | 10.1134/s1063783409090273 |
| Popis: | The thickness of the GaAs “dead layer” in the GaAs/AlGaAs heterostructure has been directly measured. The widths of the dead layer obtained in the experiment are compared with the values for the same material interfacing with the external medium which were found earlier, as well as with theoretical predictions made by different authors. |
| Databáze: | OpenAIRE |
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