Uniaxial-biaxial stress hybridization for super-critical strained-si directly on insulator (SC-SSOI) PMOS with different channel orientations

Autor:	Qianghua Xie, L. Prabhu, Y.C. Sun, J. Mogab, Bich-Yen Nguyen, H.C. Tuan, Jon D. Cheek, S. Venkatesan, S. Murphy, Mong-Song Liang, C.H. Chang, Ted R. White, Yuan-Hung Chiu, Victor H. Vartanian, Aaron Thean, Y.C. See, M. Ramon, H. Collard
Rok vydání:	2006
Předmět:	Lattice strain Materials science business.industry Stress engineering MOSFET Stress relaxation Silicon on insulator Biaxial tensile test Insulator (electricity) Structural engineering Composite material business PMOS logic
Zdroj:	IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
DOI:	10.1109/iedm.2005.1609393
Popis:	This paper describes the novel stress engineering of SC-SSOI devices through the interactions between biaxial lattice strain, uniaxial relaxation, process-induced stressor and channel orientation. We have demonstrated a method of uniaxial stress relaxation with compressive capping layer (cESL) to achieve the desired stress configurations for enhanced short-channel SC-SSOIpMOS devices
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b8350f1063d601ecedaef85084094ede https://doi.org/10.1109/iedm.2005.1609393 Zobrazit plný text záznamu