Long-wavelength HgCdTe on silicon negative luminescent devices
Autor: | Neil Gordon, Jean Giess, M. R. Houlton, Geoffrey R. Nash, James W. Edwards, Janet E. Hails, M. K. Haigh, Andrew Graham |
---|---|
Rok vydání: | 2005 |
Předmět: | |
Zdroj: | Applied Physics Letters. 86:011910 |
ISSN: | 1077-3118 0003-6951 |
DOI: | 10.1063/1.1843280 |
Popis: | We have investigated the negative luminescent properties of a device fabricated from metalorganic vapor phase epitaxy grown HgCdTe on a Si substrate. The peak emission was at 7.2μm, and the intrinsic Auger processes were found to be very well suppressed. The low currents (minimum current density, Jmin, of 0.84A∕cm2 at 295K) needed to drive these devices makes them suitable for a range of device applications. |
Databáze: | OpenAIRE |
Externí odkaz: |
načítá se...