Long-wavelength HgCdTe on silicon negative luminescent devices

Autor: Neil Gordon, Jean Giess, M. R. Houlton, Geoffrey R. Nash, James W. Edwards, Janet E. Hails, M. K. Haigh, Andrew Graham
Rok vydání: 2005
Předmět:
Zdroj: Applied Physics Letters. 86:011910
ISSN: 1077-3118
0003-6951
DOI: 10.1063/1.1843280
Popis: We have investigated the negative luminescent properties of a device fabricated from metalorganic vapor phase epitaxy grown HgCdTe on a Si substrate. The peak emission was at 7.2μm, and the intrinsic Auger processes were found to be very well suppressed. The low currents (minimum current density, Jmin, of 0.84A∕cm2 at 295K) needed to drive these devices makes them suitable for a range of device applications.
Databáze: OpenAIRE
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