Growth of CVD diamond nanopillars with imbedded silicon-vacancy color centers
| Autor: | V. A. Shershulin, Alexey V. Akimov, K. N. Tukmakov, Andrey A. Khomich, V. G. Ralchenko, Vadim V. Vorobyov, D. N. Sovyk, Igor I. Vlasov |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
Silicon chemistry.chemical_element Nanotechnology 02 engineering and technology Chemical vapor deposition Substrate (electronics) engineering.material Epitaxy 01 natural sciences Focused ion beam Inorganic Chemistry 0103 physical sciences Electrical and Electronic Engineering Physical and Theoretical Chemistry Spectroscopy Nanopillar 010302 applied physics business.industry Organic Chemistry Doping Diamond 021001 nanoscience & nanotechnology Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials chemistry engineering Optoelectronics sense organs 0210 nano-technology business |
| Zdroj: | Optical Materials. 61:25-29 |
| ISSN: | 0925-3467 |
| Popis: | Silicon-doped diamond nanopillars have been produced by a microwave plasma chemical vapor deposition (CVD) on a single crystal diamond substrate through holes in a Si mask perforated with a focused ion beam. Arrays of 400 nm diameter pillars with aspect ratio up to 2.8 are grown epitaxially being confined by channels in the mask, the latter serving also as the Si doping source. Strong photoluminescent (PL) emission of the SiV centers at 738.7 nm wavelength, localized within the pillars, has been detected and imaged with a fluorescence microscope. The SiV PL decay time of 1.1 ns has been deduced from PL kinetics measurements. An increase of specific PL intensity (intensity per unit volume of the pillar) with the aspect ratio is noted. |
| Databáze: | OpenAIRE |
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