Extended defects in Si wafers implanted with ions of rare-earth elements
| Autor: | V.I. Vdovin, E.O. Parshin, M.I. Makovijchuk, Elena I. Shek, T.G. Yugova, Nikolai A. Sobolev |
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| Rok vydání: | 1999 |
| Předmět: |
Nuclear and High Energy Physics
Materials science Silicon Annealing (metallurgy) business.industry Metallurgy chemistry.chemical_element Isotropic etching Ion Erbium chemistry Differential interference contrast microscopy Transmission electron microscopy Optoelectronics Wafer business Instrumentation |
| Zdroj: | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 147:116-121 |
| ISSN: | 0168-583X |
| DOI: | 10.1016/s0168-583x(98)00564-3 |
| Popis: | Structural defects arising in Cz–Si wafers after implantation with high-energy ions of rare-earth elements (Er, Ho, Dy) and annealing in a chlorine-containing ambience were studied by transmission electron microscopy and chemical etching/Nomarski microscopy. Regularities of extended defect formation in dependence on implant and annealing conditions as well as evolution of structural defect patterns during thermal annealing have been established. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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