Protonic nonvolatile field effect transistor memories in Si/SiO/sub 2//Si structures
| Autor: | L. B. Archer, Robert M. Wallace, Karel Vanheusden, J.R. Schwank, William L. Warren, R. A. B. Devine, Bruce L. Draper, Daniel M. Fleetwood, M.G. Knoll, P.S. Winokur, Marty R. Shaneyfelt |
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| Rok vydání: | 1997 |
| Předmět: |
Nuclear and High Energy Physics
Materials science Proton Silicon business.industry Annealing (metallurgy) Oxide chemistry.chemical_element Radiation Ion chemistry.chemical_compound Nuclear Energy and Engineering chemistry Electronic engineering Optoelectronics Field-effect transistor Electrical and Electronic Engineering business Forming gas |
| Zdroj: | IEEE Transactions on Nuclear Science. 44:1789-1798 |
| ISSN: | 1558-1578 0018-9499 |
| DOI: | 10.1109/23.658944 |
| Popis: | A low-voltage, radiation-tolerant, nonvolatile field effect transistor (NVFET) memory involving proton motion in SiO/sub 2/ is illustrated in both bulk Si and silicon-on-insulator devices. We discuss a mechanism by which the protons are created in the oxide layer by a forming gas anneal. At low temperature (T |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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