Elimination of parasitic channels in fully depleted SOI CMOS

Autor:	C.K. Chen, C.L. Chen, P.W. Wyatt, P. Gouker, J.A. Burns, D.R.W. Yost, V. Suntharalingam, C.L. Keast
Rok vydání:	2003
Předmět:	Improved performance Ion implantation Materials science CMOS business.industry Subthreshold conduction Optoelectronics Silicon on insulator Soi cmos business Electronic circuit PMOS logic
Zdroj:	2003 IEEE International Conference on SOI.
DOI:	10.1109/soi.2003.1242889
Popis:	In this paper, we have identified and corrected two different mechanisms giving rise to low threshold parasitic channels and subthreshold shoulders in our FDSOI process. PMOS shoulders resulting from local gate penetration were eliminated by incorporating an edge implant and reducing BOX loss. These process modifications have significantly improved subthreshold behaviour of both n and pMOS devices and have substantially improved performance and yield of complex circuits.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b80576cd3ed386e5739df49ad60ae218 https://doi.org/10.1109/soi.2003.1242889 Zobrazit plný text záznamu