100 Gb/s photoreceiver module based on 4ch × 25 Gb/s vertical-illumination-type Ge-on-Si photodetectors and amplifier circuits
| Autor: | Deog-Kyoon Jeong, Gyu-Seob Jeong, Sanghoon Kim, Gyungock Kim, In Gyoo Kim, Ki-Seok Jang, Sun Ae Kim, Jiho Joo, Jin Hyuk Oh, Hankyu Chi |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
business.industry Heterojunction bipolar transistor Amplifier Optical communication Photodetector 02 engineering and technology 01 natural sciences 010309 optics 020210 optoelectronics & photonics CMOS 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Optoelectronics Photonics business Sensitivity (electronics) Electronic circuit |
| Zdroj: | SPIE Proceedings. |
| ISSN: | 0277-786X |
| Popis: | We present the performance of 4-channel × 25 Gb/s all-silicon photonic receivers based on hybrid-integrated vertical Ge-on-bulk-silicon photodetectors with 65nm bulk CMOS front-end circuits, characterized over 100 Gb/s. The sensitivity of a single-channel Ge photoreceiver module at a BER = 10 -12 was measured -11 dBm at 25 Gb/s, whereas, the measured sensitivity of a 4-ch Ge photoreceiver was -10.06 ~ -10.9 dBm for 25Gb/s operation of each channel, and further improvement is in progress. For comparison, we will also present the performance of a 4-ch × 25 Gb/s photoreceiver module, where commercial InP HBT-based front-end circuits is used, characterized up to 100 Gb/s. |
| Databáze: | OpenAIRE |
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