Photosensitive resist system composed of phenolic resin and aromatic azide
Autor: | Saburo Nonogaki, Minoru Toriumi |
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Rok vydání: | 1990 |
Předmět: | |
Zdroj: | Makromolekulare Chemie. Macromolecular Symposia. 33:233-241 |
ISSN: | 0258-0322 |
DOI: | 10.1002/masy.19900330120 |
Popis: | Phenolic resins such as cresol novolac and poly-(p-hydroxystyrene) are photosensitized by the addition of an aromatic azide to give negative-working photoresists. The spectral sensitivity can be varied from deep UV to visible region by changing the kind of azide. The system composed of poly(p-hydroxystyrene) and a phenol ester of p-azidobenzenesulfonic acid is expected to be useful in deep UV fine-line lithography. The system containing 23 wt% of p-n-pentylphenol p-azidobenzenesulfonate exhibits a photosensitivity about 50 mJ/cm2 at the wavelength of 248 nm. |
Databáze: | OpenAIRE |
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