Photosensitive resist system composed of phenolic resin and aromatic azide

Autor: Saburo Nonogaki, Minoru Toriumi
Rok vydání: 1990
Předmět:
Zdroj: Makromolekulare Chemie. Macromolecular Symposia. 33:233-241
ISSN: 0258-0322
DOI: 10.1002/masy.19900330120
Popis: Phenolic resins such as cresol novolac and poly-(p-hydroxystyrene) are photosensitized by the addition of an aromatic azide to give negative-working photoresists. The spectral sensitivity can be varied from deep UV to visible region by changing the kind of azide. The system composed of poly(p-hydroxystyrene) and a phenol ester of p-azidobenzenesulfonic acid is expected to be useful in deep UV fine-line lithography. The system containing 23 wt% of p-n-pentylphenol p-azidobenzenesulfonate exhibits a photosensitivity about 50 mJ/cm2 at the wavelength of 248 nm.
Databáze: OpenAIRE