Doping mechanisms of gallium arsenide with tin in gas phase epitaxy processes

Autor:	M. P. Ruzaikin, I. A. Bobrovnikova, M. D. Vilisova, V. N. Ryazanov, L. P. Porokhovnichenko
Rok vydání:	1990
Předmět:	Photoluminescence Materials science Doping General Physics and Astronomy chemistry.chemical_element Epitaxy Diatomic molecule Gallium arsenide Condensed Matter::Materials Science chemistry.chemical_compound Adsorption chemistry Impurity Chemical physics Tin
Zdroj:	Soviet Physics Journal. 33:491-494
ISSN:	1573-9228 0038-5697
DOI:	10.1007/bf01325005
Popis:	A thermodynamic calculation of the equilibrium composition of the gas phase Ga-As-Sn-Cl-H system was carried out. An estimate of the impurity composition of adsorbate layers was made. A study of the electrophysical and photoluminescent properties of tin-doped GaAs epitaxial layers was conducted. From a comparison of the calculated and experimental data, it follows that the dependence of trapping mechanisms for tin on the conditions of epitaxial growth corresponds to changes in the gas phase and adsorbate layer compositions. A mechanism is proposed in which the introduction of impurities into the layers in elemental and complex forms occurs due to capture of atomic and diatomic tin adsorbed on the surface.
Databáze:	OpenAIRE
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