Effects of a Native Oxide Layer on the Carrier Mobility and Void Formation at Aluminum-Induced Crystallization of Amorphous Silicon
| Autor: | Jen Fin Lin, Cheng Chang Peng, Chen-Kuei Chung |
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| Rok vydání: | 2010 |
| Předmět: |
Amorphous silicon
Electron mobility Void (astronomy) Materials science Renewable Energy Sustainability and the Environment Oxide Nanocrystalline silicon chemistry.chemical_element Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound chemistry Aluminium law Materials Chemistry Electrochemistry Crystallization Composite material |
| Zdroj: | Journal of The Electrochemical Society. 157:K260 |
| ISSN: | 0013-4651 |
| DOI: | 10.1149/1.3496056 |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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