Pure Blue Laser Diodes Based on Nonpolarm-Plane Gallium Nitride with InGaN Waveguiding Layers
| Autor: | Hiroaki Ohta, Taketoshi Tanaka, Masashi Kubota, Kuniyoshi Okamoto |
|---|---|
| Rok vydání: | 2007 |
| Předmět: |
Blue laser
Threshold current Materials science Physics and Astronomy (miscellaneous) Laser diode business.industry General Engineering General Physics and Astronomy Gallium nitride Cladding (fiber optics) law.invention Wavelength chemistry.chemical_compound Optics chemistry law Optoelectronics business Lasing threshold Diode |
| Zdroj: | Japanese Journal of Applied Physics. 46:L820-L822 |
| ISSN: | 0021-4922 |
| DOI: | 10.1143/jjap.46.l820 |
| Popis: | Blue laser diodes (LDs) based on m-plane gallium nitride were demonstrated by using m-plane GaN substrates. The lasing wavelength and the threshold current under pulsed operation were 451.8 nm and 134 mA (22.3 kA/cm2), respectively. The device structures consisted of InGaN-based multi-quantum wells, InGaN guiding layers, and Al-containing cladding layers. The InGaN guiding layers play two roles; as appropriate optical waveguides for longer lasing wavelengths and for the prevention of macroscopic cracks parallel to the c-plane. The latter is an indispensable technology in order to fabricate nonpolar LDs for longer wavelengths beyond the blue region. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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