Femtosecond pulse laser processing of TiN on silicon
| Autor: | Wolfgang Kautek, Jörn Bonse, J. Krüger, S. Baudach, Pascale Rudolph |
|---|---|
| Rok vydání: | 2000 |
| Předmět: |
Laser ablation
Materials science Silicon business.industry Analytical chemistry General Physics and Astronomy chemistry.chemical_element Pulse duration Surfaces and Interfaces General Chemistry Substrate (electronics) Condensed Matter Physics Surfaces Coatings and Films chemistry Femtosecond Optoelectronics Tin business Penetration depth Ultrashort pulse laser |
| Zdroj: | Applied Surface Science. :659-663 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/s0169-4332(99)00481-x |
| Popis: | Ultrashort pulse laser microstructuring (pulse duration 130 fs, wavelength 800 nm, repetition rate 2 Hz) of titanium nitride (TiN) films on silicon substrates was performed in air using the direct focusing technique. The lateral and vertical precision of laser ablation was evaluated. The TiN ablation threshold changed with the number of pulses applied to the surface due to an incubation effect. An ablation depth per pulse below the penetration depth of light was observed. Columnar structures were formed in the silicon substrate after drilling through the TiN layer. |
| Databáze: | OpenAIRE |
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