The defect states in sputtered GeSeBi films

Autor:	E. Mytilineou, P. Kounavis
Rok vydání:	1996
Předmět:	Photocurrent Condensed matter physics Chemistry Band gap Fermi level Condensed Matter Physics Electronic Optical and Magnetic Materials symbols.namesake Materials Chemistry Ceramics and Composites Density of states Valence band symbols Thin film Conduction band
Zdroj:	Journal of Non-Crystalline Solids. 201:119-127
ISSN:	0022-3093
DOI:	10.1016/0022-3093(96)00140-8
Popis:	A detailed study of the defect distribution in Ge25Se75−xBix sputtered films is presented by means of the modulated photocurrent and the constant photocurrent methods. The combination of these techniques provides an estimate of the defect distribution within the energy gap, as each of them measures the defect concentrations in different energy regions. The addition of Bi causes an increase of the defect density of states (DOS) at the valence band (VB) side which is accompanied by a simultaneous decrease of the DOS at the conduction band (CB) side; as a result, the Fermi level shifts towards the CB and the sign of the majority carriers changes from positive to negative.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b7bf4b23548b26d6895f80bd66b2f2fa https://doi.org/10.1016/0022-3093(96)00140-8 Zobrazit plný text záznamu Full Text from ScienceDirect