Atomic resolution scanning tunneling microscopy with a gallium arsenide tip
| Autor: | N. M. Amer, G. Nunes |
|---|---|
| Rok vydání: | 1993 |
| Předmět: |
Physics and Astronomy (miscellaneous)
Silicon business.industry Scanning tunneling spectroscopy Physics::Optics chemistry.chemical_element Spin polarized scanning tunneling microscopy Conductive atomic force microscopy Electrochemical scanning tunneling microscope Gallium arsenide law.invention Condensed Matter::Materials Science chemistry.chemical_compound Scanning probe microscopy Optics chemistry law Scanning tunneling microscope business |
| Zdroj: | Applied Physics Letters. 63:1851-1853 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.110654 |
| Popis: | A scanning tunneling microscope which uses a gallium arsenide tip has been successfully constructed. Atomic resolution is demonstrated by the imaging of the Si(111)‐7×7 surface in ultrahigh vacuum. Details of the tip preparation are given and the tip tunneling current characteristics are discussed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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