Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration

Autor:	Klaus Hempel, S. Mutas, Kornelia Dittmar, J. K. Schaeffer, V. Jaschke, Dina H. Triyoso, Markus Lenski, Susanne Ohsiek, J. Shu, Dirk Utess
Rok vydání:	2013
Předmět:	chemistry.chemical_compound Materials science Silicon nitride chemistry Gate oxide business.industry Optoelectronics business Electronic Optical and Magnetic Materials High-κ dielectric
Zdroj:	ECS Journal of Solid State Science and Technology. 2:N222-N227
ISSN:	2162-8777 2162-8769
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b7ba90586c3efd67f8ffff7699ca61a4 https://doi.org/10.1149/2.022311jss Zobrazit plný text záznamu