Influence of second phases on the ferroelectric properties of SrBi2TaNbO9 thin films fabricated by radio-frequency magnetron sputtering

Autor:	Yoon-Baek Park, Se-Myeong Jang, Jeon-Kook Lee, Jong-Wan Park
Rok vydání:	2000
Předmět:	Materials science business.industry Annealing (metallurgy) Metallurgy Heterojunction Surfaces and Interfaces Sputter deposition Condensed Matter Physics Ferroelectricity Surfaces Coatings and Films law.invention Grain growth law Optoelectronics Thin film Crystallization business Heat treating
Zdroj:	Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 18:17-22
ISSN:	1520-8559 0734-2101
DOI:	10.1116/1.582152
Popis:	Ferroelectric properties of SrBi2Ta2−xNbxO9 (SBTN) thin films were affected by the amount of Bi content in SBTN. The addition of Bi into the SBTN films could be accomplished by heat treating the SBTN/Bi2O3/SBTN heterostructure fabricated by the rf magnetron sputtering method. The Bi content was controlled by changing the thickness of the sandwiched Bi2O3 from 100 to 400 A in the SBTN/Bi2O3/SBTN heterostructure. A Bi2Pt phase was formed as a second phase in the SBTN films inserted with 400 A Bi2O3 layers, resulting in poor ferroelectric properties. A Bi2Pt phase was formed by the reaction between the bottom Pt layer and the SBTN layer. It is found that the Bi2Pt phase formation depends on the annealing temperature and Bi concentration. By inserting the Bi2O3 layers between the SBTN films, the crystallization temperature and the grain growth temperature was also reduced.
Databáze:	OpenAIRE
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