Modeling the diffusion of Be in InGaAs/InGaAsP epitaxial heterostructures under non-equilibrium point defect conditions
| Autor: | J. Marcon, S. Koumetz, O. Valet, K. Ketata, Mohamed Ketata |
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| Rok vydání: | 1999 |
| Předmět: |
Materials science
Condensed matter physics Doping chemistry.chemical_element Heterojunction Atmospheric temperature range Condensed Matter Physics Epitaxy Electronic Optical and Magnetic Materials chemistry Electric field Electrical and Electronic Engineering Beryllium Diffusion (business) Layer (electronics) |
| Zdroj: | Physica B: Condensed Matter. :823-826 |
| ISSN: | 0921-4526 |
| DOI: | 10.1016/s0921-4526(99)00513-x |
| Popis: | Be diffusion from 0.2 μm Be doped (3×1019 cm−3) In0.53Ga0.47As layer sandwiched between 0.5 μm undoped In0.73Ga0.27As0.58P0.42 layers, grown by GSMBE has been studied. The samples were subjected to RTA in temperature range from 700°C to 900°C with time durations of 10–240 s. SIMS was employed for a quantitative determination of the Be depth profiles. Two kick-out models of substitutional–interstitial diffusion have been considered. To explain the obtained experimental results, the kick-out model, involving neutral Be interstitial species and singly positively charged Ga or In self-interstitials is proposed. The built-in electric field, bulk self-interstitial generation/annihilation, the Fermi-level and extended defect formation effects were taken into account in the simulations. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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