Effects of substrate type on the characteristics of GaN epitaxial films grown by molecular beam epitaxy
| Autor: | Vladimir Dmitriev, J.W. Orton, Yu. V. Melnik, Tin S. Cheng, G B Ren, C. T. Foxon, Andrey E. Nikolaev, Sergei V. Novikov, Irina P. Nikitina |
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| Rok vydání: | 1997 |
| Předmět: |
Photoluminescence
Materials science business.industry Physics::Optics Substrate (electronics) Condensed Matter Physics Epitaxy Electronic Optical and Magnetic Materials Condensed Matter::Materials Science chemistry.chemical_compound Crystallography Lattice constant chemistry Condensed Matter::Superconductivity Materials Chemistry Silicon carbide Sapphire Optoelectronics Electrical and Electronic Engineering business Spectroscopy Molecular beam epitaxy |
| Zdroj: | Semiconductor Science and Technology. 12:917-920 |
| ISSN: | 1361-6641 0268-1242 |
| Popis: | Films of GaN have been grown simultaneously on three different substrates, sapphire, silicon carbide and GaN, by molecular beam epitaxy. The structural and optical properties of the films have been studied using x-ray diffraction techniques and low-temperature photoluminescence spectroscopy respectively. There is a clear correlation between the structural and optical properties of the film and the nature of substrate. The lattice parameter of the film is shown to depend on the type of substrate. The incorporation of shallow donors is also strongly influenced. The effect of lattice parameter, mismatch and differential thermal expansion on film properties is discussed. |
| Databáze: | OpenAIRE |
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