Diamond homo-epitaxial growth from iron carbide under high temperature–high pressure

Autor:	Bin Xu, Peng Liu, Long-Wei Yin, Yu-Xian Liu, Zhao-Yin Hao, Mu-Sen Li
Rok vydání:	2002
Předmět:	Materials science Material properties of diamond General Physics and Astronomy Mineralogy Diamond engineering.material Epitaxy Carbide Diamond type Transition metal Chemical engineering engineering Graphite Physical and Theoretical Chemistry Seed crystal
Zdroj:	Chemical Physics Letters. 363:211-218
ISSN:	0009-2614
DOI:	10.1016/s0009-2614(02)01174-0
Popis:	Diamond seed crystals were treated with Fe 3 C powders under high temperature and high pressure (HPHT). AFM images reveal that high quality homo-epitaxial diamond have been successfully grown on the diamond seed. The homo-epitaxial grown diamond film was also confirmed by laser Raman spectra and a net positive weight gain of the diamonds. It was suggested that homo-epitaxial diamond film could be formed through decomposition of iron carbide under HPHT. This study provides direct evidence for diamond formation directly through decomposition of transition metal carbide, and sets up a very effective way to realize diamond growth different from traditional HPHT method using graphite as a carbon source.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b7a96b139ecd367dbf2f6e8dced3e7d3 https://doi.org/10.1016/s0009-2614(02)01174-0 Zobrazit plný text záznamu Full Text from ScienceDirect