| Autor: |
Klaus H. Ploog, Zhao-Ping Wang, Guohua Li, He Xiang Han, De Sheng Jiang |
| Rok vydání: |
1990 |
| Předmět: |
|
| Zdroj: |
Quantum Well and Superlattice Physics III. |
| ISSN: |
0277-786X |
| DOI: |
10.1117/12.20761 |
| Popis: |
The samples of (GaAs) (AlAs) superlattices (SLs) were grown by MIBE method on (001)-orientedsemi-thsulathg GaAs substrates. The photoluminescence (PL) was measured at 77 K and under hydrostaticpressure in the range of 0- 30 Kbar. The dependence of the energy separation between conduction band F-like and X- like levels on n values was obtained from the measured results. The transition from type I totype II was observed at atmosphere in a SL of n = 1 1. It is in good agreement with the calculated resultbased on Kronig-Penney model. It is found that the pressure coefficient of X-like states decreases with de-creasing the n values. And it is explained by a combined effects. The pressure dependence of the levels andluminescence intensities demonstrates that F-X mixing is quite weak.1. INTRODUCTIONIt is well known that the lowest conduction band states are in F-valley for bulk GaAs and in X-valleyfor bulk AlAs. In GaAs/AlAs SLs,the X-valley in AlAs is lower than that in GaAs due to the band offset. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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