Fluorine-Related Defects in BF2 +-Implanted Si Probed by Monoenergetic Positron Beams

Autor:	Naoyuki Komuro, Masahito Watanabe, Tomohisa Kitano, Ryoichi Suzuki, Tomohisa Mikado, Takao Kawano, Shoichiro Tanigawa, Akira Uedono, Tsuyoshi Moriya, Toshiyuki Ohdaira
Rok vydání:	1997
Předmět:	Condensed Matter::Materials Science Materials science Positron Annealing (metallurgy) Vacancy defect Annihilation radiation General Engineering General Physics and Astronomy Atomic physics Epitaxy Spectral line Doppler broadening Amorphous solid
Zdroj:	Japanese Journal of Applied Physics. 36:969
ISSN:	1347-4065 0021-4922
Popis:	Fluorine-related defects in 30-keV BF2 +-implanted Si were probed using monoenergetic positron beams. From measurements of Doppler broadening profiles of the annihilation radiation as a function of incident positron energy and those of lifetime spectra of positrons, depth profiles of defects and the species of the defects were determined. For an as-implanted specimen, the major species of the defects below the amorphous region was identified to be divacancies. Upon rapid thermal annealing above 700 °C, solid phase epitaxial growth of the amorphous region started, but no shift of the depth profile of defects detected by the positron annihilation technique was observed. During the regrowth of the amorphous region, vacancy-fluorine complexes were introduced. The complexes between vacancy clusters and fluorine atoms were observed even after 1100 °C annealing.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b792d01b2f11f860e10fa1a4f95ff92e https://doi.org/10.1143/jjap.36.969 Zobrazit plný text záznamu