Optical and electrical characterization methods of plasma-induced damage in silicon nitride films
| Autor: | Tomohiro Kuyama, Koji Eriguchi |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Physics and Astronomy (miscellaneous) Dielectric strength General Engineering Oxide General Physics and Astronomy Time-dependent gate oxide breakdown 02 engineering and technology Plasma 021001 nanoscience & nanotechnology 01 natural sciences chemistry.chemical_compound Hydrofluoric acid chemistry X-ray photoelectron spectroscopy Silicon nitride 0103 physical sciences Composite material 0210 nano-technology Layer (electronics) |
| Zdroj: | Japanese Journal of Applied Physics. 57:06JD03 |
| ISSN: | 1347-4065 0021-4922 |
| Popis: | We proposed evaluation methods of plasma-induced damage (PID) in silicon nitride (SiN) films. The formation of an oxide layer by air exposure was identified for damaged SiN films by X-ray photoelectron spectroscopy (XPS). Bruggeman's effective medium approximation was employed for an optical model consisting of damaged and undamaged layers, which is applicable to an in-line monitoring by spectroscopic ellipsometry (SE). The optical thickness of the damaged layer — an oxidized layer — extended after plasma exposure, which was consistent with the results obtained by a diluted hydrofluoric acid (DHF) wet etching. The change in the conduction band edge of the damaged SiN films was presumed from two electrical techniques, i.e., current–voltage (I–V) measurement and time-dependent dielectric breakdown (TDDB) test with a constant voltage stress. The proposed techniques can be used for assigning the plasma-induced structural change in an SiN film widely used as an etch-protecting layer. |
| Databáze: | OpenAIRE |
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