Recombination parameters of epitaxial CdxHg1-xTe/CdTe layers from photoelectromagnetic and photoconductive effects
| Autor: | I A Panaev, S A Studenikin |
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| Rok vydání: | 1993 |
| Předmět: |
Condensed matter physics
Chemistry Photoconductivity Conductivity Condensed Matter Physics Epitaxy Cadmium telluride photovoltaics Electronic Optical and Magnetic Materials Magnetic field Nuclear magnetic resonance Electric field Materials Chemistry Electrical and Electronic Engineering Diffusion (business) Recombination |
| Zdroj: | Semiconductor Science and Technology. 8:1324-1330 |
| ISSN: | 1361-6641 0268-1242 |
| DOI: | 10.1088/0268-1242/8/7/022 |
| Popis: | It is shown that photoconductivity (PC) of thin epitaxial CdxHg1-xTe/CdTe layers in the stationary crossed fields has a complicated non-monotonic behaviour as a function of magnetic field. The analytical expressions for PC and the photoelectromagnetic (PEM) effect, including diffusion, gradient and photoconductive components, are presented and qualitative physics is discussed. The experiments were carried out on liquid-phase epitaxial CdxHg1-xTe/CdTe films of p-type conductivity with x approximately=0.2 at liquid-nitrogen temperature. On the basis of the combined analysis of PC and PEM effects a set of the recombination and diffusion parameters was determined: the volume lifetime, the diffusion length, the surface recombination velocities and the internal electric field due to the composition gradient. Also, it is shown that from the PC measurements in different electric fields one can obtain information about variation of the parameters across the layer. |
| Databáze: | OpenAIRE |
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