Anisotropic temperature distribution causing an incremental trend in the saturated drain-current of SiC MOSFET
| Autor: | Shogo Ogawa, Taketoshi Tanaka, Yohei Nakamura, Ken Nakahara |
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| Rok vydání: | 2020 |
| Zdroj: | Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials. |
| DOI: | 10.7567/ssdm.2020.d-6-02 |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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