Low‐energy separation by implantation of oxygen structures via plasma source ion implantation

Autor:	J. E. Turner, Krishna Shenai, Shuit-Tong Lee, E.A. Perez-Albuerne, R. R. Speth, N. Meyyappan, D. Dallmann, John H. Booske, J. B. Kruger, Ling Zhang, Matthew Goeckner, Paul Rissman, J. L. Shohet
Rok vydání:	1994
Předmět:	Auger electron spectroscopy Materials science Physics and Astronomy (miscellaneous) Silicon Silicon dioxide Annealing (metallurgy) Analytical chemistry chemistry.chemical_element Oxygen Ion chemistry.chemical_compound Ion implantation chemistry Wafer
Zdroj:	Applied Physics Letters. 65:962-964
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.112162
Popis:	The initial results from an investigation into the feasibility of using plasma source ion implantation (PSII) to produce separation by implantation of oxygen structures in silicon are reported. Oxygen ions are implanted into p‐type (111) oriented silicon wafers using a −30 kV acceleration potential and an oxygen plasma at a pressure of 0.2 mTorr. The effects of ion dose and high‐voltage pulse width were examined. Some of the implanted wafers were annealed. Both the as‐implanted and annealed wafers were examined using secondary‐ion‐mass spectroscopy and Auger electron spectroscopy. The initial results show that oxygen can be implanted by PSII and suggest that a buried layer of silicon dioxide has been formed in the implanted wafers.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b76a54043560f5b43df42740bbc8592d https://doi.org/10.1063/1.112162 Zobrazit plný text záznamu