Reaction-diffusion model for interface traps induced by BTS stress including H+, H and H2 as diffusion species

Autor:	Djamila Doumaz, Abdelhak Feraht Hemida, Karim Benmassai, Hakim Tahi, Mohamed Goudjil, Boualem Djezzar, Abdelmadjid Benabdelmoumene, Mohamed Boubaaya
Rok vydání:	2014
Předmět:	Stress (mechanics) Materials science Proton Hydrogen chemistry Silicon Diffusion Reaction–diffusion system Dangling bond Physical chemistry chemistry.chemical_element Hydrogen atom
Zdroj:	IDT
DOI:	10.1109/idt.2014.7038619
Popis:	Negative and positive bias temperature instability (NBTI and PBTI) are described in the same model using the Reaction-Diffusion (RD) by taking into account all protagonist diffusion hydrogenate species; hydrogen atom (H), proton (H+) and hydrogen molecular (H 2 ). This model is based on the probability that the passivated dangling bonds at the interface of silicon-oxide release the hydrogen H or proton H+. This probability is expressed as a function of experimental parameters.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b7639fb0359690aae577f5adec293a11 https://doi.org/10.1109/idt.2014.7038619 Zobrazit plný text záznamu