InGaAsN on GaAs (111)B for telecommunication laser application

Autor:	JM José Maria Ulloa, E. Muñoz, Javier Miguel-Sánchez, Adrian Hierro, A. Guzmán
Rok vydání:	2005
Předmět:	Optical fiber Photoluminescence Annealing (metallurgy) business.industry Gallium nitride Condensed Matter Physics Laser law.invention Blueshift Inorganic Chemistry chemistry.chemical_compound Optics chemistry law Materials Chemistry Optoelectronics business Quantum well Molecular beam epitaxy
Zdroj:	Journal of Crystal Growth. 278:234-238
ISSN:	0022-0248
DOI:	10.1016/j.jcrysgro.2004.12.068
Popis:	In this work we present the GaAs (1 1 1)B as a candidate to develop laser devices working on the second and third fiber optic windows. We show that the ions coming from the radiofrequency plasma cell reduce the optical emission dramatically. This damage can be reduced if a magnetic field is used during the growth of the InGaAsN quantum wells, reducing the ion density impinging on the surface and improving therefore the optical quality. In addition, a lower optimum RTA temperature was found for samples with a lower ion concentration, implying a better structural quality. Finally, a lower blueshift after annealing was also found. The higher optical and structural quality of the samples grown with the magnetic field, the lower optimum RTA temperature and the reduced blueshift after anneling offer interesting perspectives to the development of long-wavelength devices using misoriented GaAs (1 1 1)B substrates.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b7617232f36d40c43b3090fa51bdc21d https://doi.org/10.1016/j.jcrysgro.2004.12.068 Zobrazit plný text záznamu Full Text from ScienceDirect