Vapor-Phase Epitaxy of AlN Layers on AlN/Si(111) Templates Synthesized by Reactive Magnetron Sputtering

Autor:	S. N. Rodin, N. D. Gruzinov, M. P. Shcheglov, Vasily N. Bessolov, V. N. Panteleev, E. V. Konenkova, M. E. Kompan
Rok vydání:	2020
Předmět:	Materials science Physics and Astronomy (miscellaneous) Silicon Hydride business.industry chemistry.chemical_element Sputter deposition Nitride Epitaxy chemistry Aluminium Sputtering Optoelectronics Metalorganic vapour phase epitaxy business
Zdroj:	Technical Physics Letters. 46:382-384
ISSN:	1090-6533 1063-7850
DOI:	10.1134/s1063785020040185
Popis:	Epitaxial aluminum nitride (AlN) layers on Si(111) substrates have been grown by sequential application of several techniques including reactive magnetron sputter deposition to a thickness of 20 nm, metalorganic vapor-phase epitaxy (MOVPE) to a total thickness of 450 nm, and hydride vapor-phase epitaxy (HVPE) to a final thickness of 2 μm. Synthesis of AlN layers by this combined method provides a significant decrease in the residual strain and suppresses the formation of cracks in the epilayer.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b76161dd1b1f6101705c80d997bc1c27 https://doi.org/10.1134/s1063785020040185 Zobrazit plný text záznamu Plný text ve formátu PDF Plný text ve formátu HTML
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