| Autor: |
Zhao Gaojie, Sun Yujun, Liu Yihong, Cheng Yue, Zhi-zhan Chen, Tao Wang |
| Rok vydání: |
2015 |
| Předmět: |
|
| Zdroj: |
Chinese Physics B. 24:107303 |
| ISSN: |
1674-1056 |
| Popis: |
The Pt/Si/Ta/Ti multilayer metal contacts on 4H–SiC are annealed in Ar atmosphere at 600 °C–1100 °C by a rapid thermal processor (RTP). The long-term thermal stability is evaluated by aging the annealed contact at 600 °C in air. The contact's properties are determined by current–voltage measurement, and the specific contact resistance is calculated based on the transmission line model (TLM). Transmission electron microscope (TEM) and energy-dispersive x-ray spectrometry (EDX) are used to characterize the interface morphology, thickness, and composition. The results reveal that a higher annealing temperature is favorable for the formation of an Ohmic contact with a lower specific contact resistance, and causes the rapid degradation of the Ohmic contact in the aging process. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
