On the transient amorphous silicon structures during solid phase crystallization
| Autor: | Per I. Widenborg, H. Hidayat, Bram Hoex, F. Law, Joachim Luther, Alan Prem Kumar |
|---|---|
| Rok vydání: | 2013 |
| Předmět: |
Amorphous silicon
Materials science Nanocrystalline silicon Nucleation Thermodynamics Condensed Matter Physics Electronic Optical and Magnetic Materials Crystal chemistry.chemical_compound symbols.namesake Crystallography Molecular geometry chemistry Polarizability Materials Chemistry Ceramics and Composites symbols Crystalline silicon Physics::Chemical Physics Raman spectroscopy |
| Zdroj: | Journal of Non-Crystalline Solids. 363:172-177 |
| ISSN: | 0022-3093 |
| DOI: | 10.1016/j.jnoncrysol.2012.12.034 |
| Popis: | By analyzing the solid phase crystallization (SPC) of amorphous silicon (a-Si) with the Johnson-Mehl-Avrami-Kolmogorov (JMAK) model, it was found that the crystallization kinetics was non-ideal, with indications of a non-constant nucleation rate. Detailed structural analysis of the a-Si material during SPC revealed an increasing bond angle distortion from the ideal crystalline silicon (c-Si) bond angle of 109.5°. In addition, infrared measurements indicated a change in Si Si bond polarizability, however its role in the SPC behavior is not clear. The increase in tensile stress, bond angle deviation and bond polarizability together with the increase in crystal fraction may suggest that these parameters could be correlated. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect