1.3-/spl mu/m InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE
| Autor: | H. C. Kuo, Y.K. Su, J.Y. Chi, S. Mikhrin, Fang-I Lai, Y. H. Chang, K.F. Lin, Jyh-Shyang Wang, H.P.D. Yang, Sung-Yen Chang, R.S. Hsiao, C.P. Sung, J.M. Wang, Hsin-Chieh Yu |
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| Rok vydání: | 2006 |
| Předmět: |
Materials science
business.industry Physics::Optics Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Gallium arsenide Vertical-cavity surface-emitting laser Condensed Matter::Materials Science chemistry.chemical_compound Optics chemistry Distributed Bragg reflector laser Quantum dot laser Quantum dot Optoelectronics Electrical and Electronic Engineering business Ohmic contact Lasing threshold Molecular beam epitaxy |
| Zdroj: | IEEE Photonics Technology Letters. 18:418-420 |
| ISSN: | 1041-1135 |
| DOI: | 10.1109/lpt.2005.863166 |
| Popis: | We report InAs-InGaAs quantum-dot vertical-cavity surface-emitting lasers (VCSELs) grown by molecular beam epitaxy with fully doped n- and p-doped AlGaAs distributed Bragg reflectors and including an AlAs layer to form a current and waveguiding aperture. The metal contacts are deposited on a topmost p/sup +/-GaAs contact layer and on the bottom surface of the n/sup +/-GaAs substrate. This conventional selectively oxidized top-emitting device configuration avoids the added complexity of fabricating intracavity or coplanar ohmic contacts. The VCSELs operate continuous-wave at room temperature with peak output powers of 0.33 mW and differential slope efficiencies up to 0.23 W/A. The peak lasing wavelengths are near 1.275 /spl mu/m, with a sidemode suppression ratio of 28 dB. |
| Databáze: | OpenAIRE |
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