Oxygen‐Scavenging Effects of Added Ti Layer in the TiN Gate of Metal‐Ferroelectric‐Insulator‐Semiconductor Capacitor with Al‐Doped HfO 2 Ferroelectric Film (Adv. Electron. Mater. 11/2022)
| Autor: | Yong Bin Lee, Beom Yong Kim, Hyeon Woo Park, Suk Hyun Lee, Minsik Oh, Seung Kyu Ryoo, In Soo Lee, Seungyong Byun, Doosup Shim, Jae Hoon Lee, Hani Kim, Kyung Do Kim, Min Hyuk Park, Cheol Seong Hwang |
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| Rok vydání: | 2022 |
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| Zdroj: | Advanced Electronic Materials. 8:2270056 |
| ISSN: | 2199-160X |
| Databáze: | OpenAIRE |
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