Direct writing in self‐developing resists using low‐power cw ultraviolet light

Autor:	Harold G. Craighead, J. C. White, J. E. Bjorkholm, L. Eichner, R. E. Howard
Rok vydání:	1985
Předmět:	Materials science Silicon business.industry General Physics and Astronomy chemistry.chemical_element Power (physics) chemistry.chemical_compound chemistry Resist Etching (microfabrication) Ultraviolet light Optoelectronics Methyl methacrylate business Lithography Deposition (law)
Zdroj:	Journal of Applied Physics. 58:2098-2101
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.335973
Popis:	Direct writing of micron‐sized features in self‐developing photoresists is demonstrated using less than 1 mW of cw ultraviolet light at 257 nm. No energy density or intensity thresholds for ablation are observed. Ablation depth depends only on the deposited energy density and is independent of the rate of deposition; that is, the self‐developing process is reciprocal. We have determined that an environment containing oxygen is necessary for complete self‐developing; in the absence of O2 the process is self‐limiting. Patterns created in poly(methyl methacrylate) have been faithfully reproduced into silicon substrates using reactive‐ion etching.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b747a3749c6d3a851fd1a0bbe63834db https://doi.org/10.1063/1.335973 Zobrazit plný text záznamu