The role of radiation in melt stability in zone-melt recrystallization of SOI
| Autor: | L. R. Thompson, George Collins, James Arthur Knapp |
|---|---|
| Rok vydání: | 1990 |
| Předmět: |
Zone melting
Materials science Silicon business.industry Mechanical Engineering chemistry.chemical_element Recrystallization (metallurgy) Condensed Matter Physics Instability Optics chemistry Mechanics of Materials Thermal radiation Emissivity General Materials Science Process window Graphite Composite material business |
| Zdroj: | Journal of Materials Research. 5:998-1002 |
| ISSN: | 2044-5326 0884-2914 |
| DOI: | 10.1557/jmr.1990.0998 |
| Popis: | Under circumstances in Zone-Melt-Recrystallization (ZMR) of Si-on-Insulator (SOI) structures where radiative heat loss is significant, the ∼50% decrease in emissivity when Si melts destabilizes the Si molten zone. We have demonstrated this both experimentally using a slowly scanned e-beam line source and numerically with a finite-element computational simulation. The resulting instability narrows the process window and tightens requirements on beam control and background heating uniformity, both for e-beam ZMR systems and optically-coupled systems such as a graphite strip heater. |
| Databáze: | OpenAIRE |
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