Design study of linearized AlGaAs/GaAs HBTs using Volterra series

Autor:	Young-Sik Kim, Woonyun Kim, Bumman Kim, Taemoon Roh, Joon Woo Lee
Rok vydání:	2002
Předmět:	Materials science business.industry Heterojunction bipolar transistor Photonic integrated circuit Volterra series Linearity Gallium arsenide chemistry.chemical_compound Nonlinear system chemistry Electronic engineering Optoelectronics Equivalent circuit business Intermodulation
Zdroj:	1996 IEEE MTT-S International Microwave Symposium Digest.
DOI:	10.1109/mwsym.1996.512287
Popis:	The intermodulation (IM) mechanism of HBT has been studied theoretically and experimentally. Volterra series analysis with an analytical nonlinear HBT model shows that IP3 can be greatly enhanced by using a punch-through collector structure. It is also found that the high linearity of HBT stems mainly from the almost exact cancellation between base-emitter and base-collector nonlinear current components. The fabricated HBT with a punch through collector has the IP3 of 31 dBm at a DC power consumption of 150 mW, which is 3 dB higher than those of HBTs with normal collector.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b7409963c26139731d42a3273efef9aa https://doi.org/10.1109/mwsym.1996.512287 Zobrazit plný text záznamu