Microstructure analyses of the titanium films formed by the ionized sputtering process
Autor: | Si-Young Choi, Hyeon Deok Lee, Eunha Kim, Dae Hong Ko, Bong Young Yoo |
---|---|
Rok vydání: | 1999 |
Předmět: |
Materials science
business.industry Metals and Alloys Mineralogy chemistry.chemical_element Surfaces and Interfaces Substrate (electronics) Sputter deposition Microstructure Surfaces Coatings and Films Electronic Optical and Magnetic Materials Amorphous solid chemistry Sputtering Materials Chemistry Optoelectronics Wafer Thin film business Titanium |
Zdroj: | Thin Solid Films. 340:13-17 |
ISSN: | 0040-6090 |
DOI: | 10.1016/s0040-6090(98)01428-x |
Popis: | We investigated the microstructure of the Ti-films formed on the (001) single crystal silicon wafers through the ionized sputtering process, and compared the results with those obtained by collimated sputtering. We found that the Ti-films created by ionized sputtering process without the substrate bias show less strong (002) textures than collimated sputtering. The Ti-films created by the ionized sputtering process with the substrate bias did not show any observable strong textures. We also found that the ionized sputtering processed Ti-films show about 4 nm thick amorphous Ti–Si interlayer, which is much thicker than that of the collimated sputtering process. The modifications of the microstructure of Ti-films are attributed to the ion bombardments during the ionized sputtering deposition process. |
Databáze: | OpenAIRE |
Externí odkaz: |