Electronic band Gap of ZnO under triaxial strain

Autor:	Gang Yu, Fengqiu Ji, Hua Fu, Jinhui Yang, Guoqiang Qin, Guanglei Zhang
Rok vydání:	2013
Předmět:	Materials science Condensed matter physics Strain (chemistry) business.industry Band gap Electronic band Structural engineering Thermal conduction Semiconductor General Materials Science Direct and indirect band gaps Thin film business Wurtzite crystal structure
Zdroj:	Journal of Wuhan University of Technology-Mater. Sci. Ed.. 28:48-51
ISSN:	1993-0437 1000-2413
DOI:	10.1007/s11595-013-0638-0
Popis:	The effect of triaxial strains on the band gap of wurtzite ZnO has been investigated by the first principles calculations. The results indicate that, after application of triaxial strain, the wurtzite ZnO is still a direct band gap semiconductor with conduction- and valence-band minima remains at the Γ point. Comparing with the unstrained ZnO, the E g at Γ point increases under compressive strain but decreases under tensile strain. This triaxial strain model is in better agreement with the experimental results than the widely-employed in-plane biaxial strain model, thus providing a more accurate explanation on the behaviors of ZnO thin film under three-dimensional strain.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b73a6d7142667901375194ac1a602852 https://doi.org/10.1007/s11595-013-0638-0 Zobrazit plný text záznamu Full text from SpringerLink