Tunneling current in magnetic-ferroelectric-superconducting heterostructures
Autor: | Ashok Kumar, Ram S. Katiyar, V.N. Ojha, Ravikant, R. K. Rakshit, Manju Singh |
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Rok vydání: | 2018 |
Předmět: |
Superconductivity
Materials science Condensed matter physics General Physics and Astronomy Conductance Heterojunction 02 engineering and technology Coercivity 021001 nanoscience & nanotechnology 01 natural sciences Ferroelectricity Magnetic field Pulsed laser deposition 0103 physical sciences 010306 general physics 0210 nano-technology Quantum tunnelling |
Zdroj: | EPL (Europhysics Letters). 122:57002 |
ISSN: | 1286-4854 |
DOI: | 10.1209/0295-5075/122/57002 |
Popis: | We report the tunneling current behavior of magnetic-ferroelectric-superconducting heterostructures for multistates non-volatile random access memory (NVRAM) elements. A heterostructure of La0.67 Sr0.33 MnO3 (LSMO) (50 nm)/PbZr0.52 Ti0.48 O3 (PZT) (5 nm)/Bi-Sr-Ca-Cu2 -OX (BSCCO) (100 nm)/LaAlO3 (LAO) architecture was fabricated by pulsed laser deposition technique. The tunneling effects were investigated well above and below the superconducting phase transition temperature of the BSCCO bottom electrode. A divergent current and conductance paths were observed for polarization up and down direction above the coercive field of the ferroelectric tunnel barrier. This behaviour was significant below T s where the moderate effect of the external magnetic field was also observed on the tunneling current. The dynamic conductance G (V ) data fitted well with Brinkman's model for both polarizations up and polarization down states which suggest the presence of large tunnel electro-resistance. |
Databáze: | OpenAIRE |
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