A 25 MS/s 14 b 200 mW ΣΔ modulator in 0.18 μm CMOS

Autor: Qiuting Huang, Pio Balmelli
Rok vydání: 2004
Předmět:
Zdroj: 2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519).
Popis: The design of a fifth-order 4-b quantizer single-loop ΣΔ modulator is presented that achieves 25-MS/s conversion rate with 84 dB of dynamic range and 82 dB of signal-to-noise ratio. Implemented in a 0.18-μm CMOS technology, the 0.95-mm 2 chip has a power consumption of 200 mW from a 1.8-V supply.
Databáze: OpenAIRE