Activation energies of Si adsorbate diffusion on a Si(001) surface

Autor:	Takahisa Doi, Masakazu Ichikawa, Ken Ninomiya, Shigeyuki Hosoki
Rok vydání:	1995
Předmět:	Surface (mathematics) Chemistry Evaporation Analytical chemistry Surfaces and Interfaces Activation energy Condensed Matter Physics Arrhenius plot Surfaces Coatings and Films law.invention Crystallography Reflection (mathematics) law Materials Chemistry Diffusion (business) Electron microscope
Zdroj:	Surface Science. 343:24-30
ISSN:	0039-6028
Popis:	The diffusion of Si adsorbates deposited on a Si(001) surface is studied by a reflection electron microscope (REM). The diffusion constants are obtained from the diffused lengths of the Si adsorbates. The activation energy of diffusion is determined with the Arrhenius plot of the diffusion constants. It is found that the activation energy on both 2 × 1 and 1 × 2 terraces changes at about 750°C. At temperatures below 750°C, the activation energy is about 1.4 eV, while it is about 2.7 eV at temperatures above 750°C. The change in activation energy is caused by the evaporation of the Si adsorbates from a Si(001) surface.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b72b4f955db7e4d8aa67715fb3b95829 https://doi.org/10.1016/0039-6028(95)00748-2 Zobrazit plný text záznamu Full Text from ScienceDirect