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The development of monolithic optoelectronic integrated circuits (OEICs) are of considerable interest because these components are expected to offer increased reliability, lower cost, and higher speed than their hybrid counterparts. Of particular interest in future broadband communication systems is the integration of long-wavelength (1.3–1.6 μm) optoelectronic devices with high-speed electronic circuits. Recent advances in heteroepitaxial growth of lattice-mismatched materials has made it possible to grow epitaxial InGaAs on GaAs substrates. This technology offers the possibility for fabrication of InGaAs interdigitated metal–semiconductor–metal (IMSM) photodetectors, operating at a wavelength of 1.3 μm, on GaAs substrates.1 Compared with lattice-matched growth on InP, growth on GaAs offers the potential for exploiting the mature GaAs electronics technology in the development of monolithic receiver OEICs. IMSM photodetectors have a planar geometry that simplifies integration with GaAs MESFETs. Monolithic integration, however, requires that the epitaxial InGaAs be able to withstand MESFET processing such as high-temperature anneals used to activate ion-implanted layers. |
