Defects in Cd x Hg1 − x Te-based heterostructures grown by molecular beam epitaxy on GaAs(310) substrates
| Autor: | A. S. Kashuba, E. V. Permikina, V. V. Arbenina |
|---|---|
| Rok vydání: | 2012 |
| Předmět: |
Materials science
business.industry Scanning electron microscope General Chemical Engineering Metals and Alloys Nucleation chemistry.chemical_element Heterojunction Epitaxy Inorganic Chemistry Field emission microscopy Crystallography chemistry Materials Chemistry Optoelectronics Crystallite Tellurium business Molecular beam epitaxy |
| Zdroj: | Inorganic Materials. 48:665-670 |
| ISSN: | 1608-3172 0020-1685 |
| DOI: | 10.1134/s0020168512070126 |
| Popis: | CdxHg1 − xTe-based epitaxial heterostructures grown on [310]-oriented GaAs substrates by molecular beam epitaxy have been studied by atomic force, scanning electron, and high-resolution field emission microscopy. A mechanism of defect formation has been proposed. The microstructure of the epilayer has been investigated in greatest detail. We have analyzed the key features of V-defect formation, in particular using depth profiling of the heterostructures by ion etching. A comparative analysis of the elemental compositions of V-defects and a defect-free region has been performed. The results indicate that, in the central part of the V-defects, the excess tellurium content is ∼2.5% and mercury deficiency is ∼3%. V-defect formation in the heterostructures is related to tellurium precipitation, which initiates nucleation of polycrystalline clusters and dislocation generation in adjacent regions. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|