| Autor: |
D. Botez, G. Tsvid, M. D'Souza, J. C. Shin, Z. Liu, J. H. Park, J. Kirch, L. J. Mawst, M. Rathi, T. F. Kuech, I. Vurgaftman, J. Meyer, J. Plant, G. Turner, P. Zory |
| Rok vydání: |
2010 |
| Předmět: |
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| Zdroj: |
Future Trends in Microelectronics: From Nanophotonics to Sensors and Energy |
| DOI: |
10.1002/9780470649343.ch4 |
| Popis: |
This chapter contains sections titled: Introduction Suppression of carrier leakage in QC lasers: The deep-well concept IQB lasers Active-photonic-crystal (APC) structures: Scaling to 1 W coherent power The potential of IQB lasers Fabrication of IQB devices and preliminary light-emission results Conclusions |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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