MOVPE growth of Al x Ga 1‐x N with x ∼ 0.5 on epitaxial laterally overgrown AlN/sapphire templates for UV‐LEDs

Autor:	Marcus Weyers, Arne Knauer, V. Kueller, Ute Zeimer
Rok vydání:	2014
Předmět:	Materials science Scanning electron microscope business.industry Cathodoluminescence Condensed Matter Physics medicine.disease_cause Epitaxy law.invention law Sapphire medicine Optoelectronics Metalorganic vapour phase epitaxy Growth rate business Ultraviolet Light-emitting diode
Zdroj:	physica status solidi c. 11:377-380
ISSN:	1610-1642 1862-6351
DOI:	10.1002/pssc.201300415
Popis:	The crystalline perfection of AlxGa1-xN layers with Al content of x ∼ 0.5 on epitaxial laterally overgrown (ELO) AlN with low defect density was investigated by spatially and spectrally resolved cathodoluminescence, scanning electron and atomic force microscopy. Cathodoluminescence mapping reveals compositional variations caused by different Ga incorporation during growth over macro-steps resulting from step bunching on the ELO-AlN. Introducing AlN interlayers as marker the influence of the macrosteps as well as of the growth rate on the development of Ga-rich regions was studied. With increasing growth rate from 0.2 to 1 µm/h the spatial extension of the Ga-rich regions is strongly reduced. At the same time the difference in Ga content is increased. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze:	OpenAIRE
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